A1942 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

A1942

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1942

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

-160

V

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A

-2.5

V

VBE

Base-emitter voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-6A ; VCE=-5V

VCB=-160V; IE=0

VEB=-5V; IC=0

-1.5

V

-5

μA

-5

μA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

55

160

hFE-2

DC current gain

导体 fT

Transition frequency

固I电NC半HANGE SEMICONDUCTOR COB

Collector output capacitance

‹ hFE-1 classifications

R

O

IC=-6A ; VCE=-5V

IC=-1A ; VCE=-5V

IE=0; f=1MHz;VCB=-10V

35

30

320

MHz

pF

55-110

80-160

2

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