A1893 Ver la hoja de datos (PDF) - Toshiba
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A1893 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1893
Strobe Flash Applications
Audio Power Amplifier Applications
2SA1893
Unit: mm
• hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
• hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −1.0 V (max)
(IC = −4 V, IB = −0.1 A)
• High-power dissipation: PC = 1.3 W
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−35
V
−20
V
−8
V
−5
A
−8
−0.5
A
1.3
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Note 1: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09
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