SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1671
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=-6V; IC=0
IC=-3A ; VCE=-4V
IC=-0.5A ; VCE=-12V
MIN TYP. MAX UNIT
-120
V
-6
V
-0.5
V
-10
µA
-10
µA
50
180
20
MHz
hFE classifications
O
P
Y
50-100 70-140 90-180
2