2SA1579 Ver la hoja de datos (PDF) - TY Semiconductor

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componentes Descripción

Fabricante

2SA1579

High-Voltage Amplifier Transistor

TY Semiconductor 

SMD Type

Transistors

Product specification

2SA1579

Features

High breakdown voltage.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

-120

V

VCEO

-120

V

VEBO

-5

V

IC

-50

mA

PC

0.2

W

Tj

150

Tstg

-55 to +150

1 Emitter

2 Base

3 Collector

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Transition frequency

hFE Classification

Marking

Rank

hFE

RR

R

180 390

RS

S

270 560

Symbol

Testconditons

BVCBO IC=-50ìA

BVCEO IC=-1mA

BVEBO IE=-50ìA

ICBO VCB=-100V

IEBO VEB=-4V

VCE(sat) IC=-10mA, IB=-1mA

hFE VCE=-6V, IC=-2mA

fT VCE=-12V, IE= 2mA, f=100MHz

Cob VCB=-12V, IE=0A, f=1MHz

Min Typ Max Unit

-120

V

-120

V

-5

V

-0.5 ìA

-0.5 ìA

-0.5 V

180

560

140

MHz

3.2

pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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Free Datasheet http://www.datasheet4u.com/

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