2SA1535 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2SA1535

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1535 2SA1535A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1535 IC=-1mA; IB=0

2SA1535A IC=-0.1mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-0.5 A;IB=-50m A

VBEsat Base-emitter saturation voltage

IC=-0.5 A;IB=-50m A

ICBO

Collector cut-off current

VCB=-150V; IE=0

hFE-1

DC current gain

IC=-150mA ; VCE=-10V

hFE-2

DC current gain

IC=-500mA ; VCE=-5V

fT

Transition frequency

IC=-50mA ; VCB=-10V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

MIN TYP. MAX UNIT

-150

V

-180

-5

V

-2.0

V

-2.0

V

-10

μA

90

330

50

200

MHz

30

pF

‹ hFE-1 classifications

Q

R

S

90-155 130-220 185-330

2

Share Link: