2SA1535 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA1535

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SA1535/A

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -150V(Min) -2SA1535

= -180V(Min) -2SA1535A

·Good Linearity of hFE

·Complement to Type 2SC3944/A

APPLICATIONS

·Designed for low-frequency driver and high power amplifi-

cation, is optimum for the driver-stage of a 60W to 100 W

output amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

2SA1535

-150

VCBO

Collector-Base

Voltage

V

2SA1535A

-180

2SA1535

-150

VCEO

Collector-Emitter

Voltage

V

2SA1535A

-180

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1

A

IC

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-1.5

A

15

W

2

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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