2SA1579 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

2SA1579

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

2SA1579

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0

-120

V

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-1mA,IB=0

-120

V

Emitter-base breakdown voltage

V(BR)EBO IE=-50μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-100V,IE=0

-0.5 μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.5 μA

DC current gain

hFE

VCE=-6V,IC=-2mA

180

560

Collector-emitter saturation voltage VCE(sat)

Transition frequency

fT

Collector output capacitance

Cob

IC=-10mA, IB=-1mA

VCE=-12V, IC= -2mA

f=30MHz

VCB=-12V,IE=0,f=1MHz

-0.5 V

140

MHz

3.2

pF

CLASSIFICANTION OF hFE

Rank

P

R

S

Range

120-270

180-390

270-560

marking

RP

RR

RS

F031

Rev.A

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