2SA1166 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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Fabricante

2SA1166

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=-0.5A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-4V

fT

Transition frequency

IC=-1A ; VCE=-10V

Product Specification

2SA1166

MIN TYP. MAX UNIT

-150

V

-150

V

-6

V

-2.0

V

-2.5

V

-10

μA

-10

μA

50

60

MHz

2

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