2SA1204-Y(2006) Ver la hoja de datos (PDF) - Toshiba

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2SA1204-Y
(Rev.:2006)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −35 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −10 mA, IB = 0

hFE (1)

VCE = −1 V, IC = −100 mA

(Note 3)

hFE (2)

VCE (sat)

VBE

fT

Cob

VCE = −1 V, IC = −700 mA

IC = −500 mA, IB = −20 mA

VCE = −1 V, IC = −10 mA

VCE = −5 V, IC = −10 mA

VCB = −10 V, IE = 0, f = 1 MHz

Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320

Marking

Part No. (or abbreviation code)

R

Lot No.

Characteristics indicator

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2SA1204

Min Typ. Max Unit

―

― −0.1 μA

―

― −0.1 μA

−30 ―

―

V

100

―

320

35

―

―

―

―

−0.7

V

−0.5 ―

−0.8

V

― 120 ― MHz

―

19

―

pF

2

2006-11-09

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