2N6660JANTXV Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N6660JANTXV Datasheet PDF : 6 Pages
| |||
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
120
VDS = 5 V
100
TJ = 150 °C
1
80
VGS = 0 V
f = 1 MHz
25 °C
0.1
0.01
0.5
125 °C
- 55 °C
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Threshold Region
15.0
ID = 1.0 A
12.5
10.0
VDS = 30 V
7.5
48 V
5.0
2.5
0
0
100 200 300 400 500 600
Qg - Total Gate Charge (pC)
Gate Charge
1.0
Duty Cycle = 0.5
60
40
C iss
C oss
20
C rss
0
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Capacitance
100
VDD = 25 V
50
Rg = 25 Ω
VGS = 0 V to 10 V
20
10
td(off)
5
tr
td(on)
2
tf
1
0.1
1
10
ID - Drain Current (A)
Load Condition Effects on Switching
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 20 °C/W
3. TJM - TC = PDMZthJC(t)
0.01
0.1
1.0
10
100
1K
10 K
t1 - Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70223.
S11-1542-Rev. D, 01-Aug-11
4
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 