2N6660JANTXV Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N6660JANTXV Datasheet PDF : 6 Pages
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2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
100
8V
VGS = 10 V
1.6
7V
80
6V
1.2
60
VGS = 10 V
2.8 V
2.6 V
0.8
0.4
0
0
5V
4V
3V
2V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Ohmic Region Characteristics
40
2.4 V
2.2 V
20
2.0 V 1.8 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics for Low Gate Drive
1.0
TJ = - 55 °C
25 °C
0.8 VDS = 15 V
125 °C
0.6
0.4
0.2
0
0
2
4
6
8
10
VGS - Gate-Source Voltage (V)
Transfer Characteristics
2.8
2.4
0.5 A
1.0 A
2.0
1.6
1.2
0.8
ID = 0.1 A
0.4
0
0
4
8
12
16
20
VGS - Gate-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.5
2.0
1.5
VGS = 10 V
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
ID - Drain Current (A)
On-Resistance vs. Drain Current
2.25
VGS = 10 V
2.00
1.75
1.50
ID = 1.0 A
0.2 A
1.25
1.00
0.75
0.50
- 50 - 10
30
70
110
150
TJ - Junction Temperature (°C)
Normalized On-Resistance vs. Junction Temperature
S11-1542-Rev. D, 01-Aug-11
3
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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