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2N6660-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
2N6660-E3
Vishay
Vishay Semiconductors Vishay
2N6660-E3 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltage
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 0 V, ID = 10 μA
VDS = VGS, ID = 1 mA
TC = - 55 °C
TC = 125 °C
VGS = ± 20 V
VDS = 0 V
TC = 125 °C
VGS = 0 V
VDS = 48 V
TC = 125 °C
VGS = 10 V
VDS = 10 V
VGS = 5 V
ID = 0.3 A
VGS = 10 V
ID = 1 A
TC = 125 °C
VDS = 7.5 V, ID = 0.525 A
IS = 0.99 A, VGS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Switchingc
Ciss
Coss
Crss
Cds
VGS = 0 V
VDS = 25 V, f = 1 MHz
Turn-On Time
Turn-Off Time
tON
VDD = 25 V, RL = 23
tOFF
ID 1 A, VGEN = 10 V, Rg = 25
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
MIN.
60
0.8
-
0.3
-
-
-
-
-
-
-
-
170
0.7
-
-
-
-
-
-
LIMITS
TYP.a
75
1.7
-
-
-
-
-
-
2
2
1.3
2.4
350
0.8
35
25
7
30
8
8.5
MAX. UNIT
-
2
V
2.5
-
± 100
nA
± 500
1
μA
100
-
A
5
3
5.6
-
mS
1.6
V
50
40
pF
10
-
10
ns
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70223
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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