2N6660(2001) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
2N6660 Datasheet PDF : 4 Pages
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2N6660, VQ1004J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 5 V
TJ = 150_C
1
Capacitance
120
VGS = 0 V
100
f = 1 MHz
80
25_C
0.1
0.01
0.5
125_C
–55_C
1.0
1.5
2.0
VGS – Gate-to-Source Voltage (V)
Gate Charge
15.0
I D = 1.0 A
12.5
10.0
VDS = 30 V
60
40
C iss
C oss
20
C rss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Load Condition Effects on Switching
100
VDD = 25 V
RG = 25 W
50 VGS = 0 to 10 V
20
7.5
48 V
10
td(off)
5.0
5
tr
td(on)
2.5
tf
2
0
0
100 200 300 400 500 600
Qg – Total Gate Charge (pC)
1
0.1
1
10
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD)
1.0
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.01
0.1
1.0
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJC = 20_C/W
3. TJM – TC = PDMZthJC(t)
1K
10 K
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
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