SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6494
CHARACTERISTICS
Tm=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0
80
VCEsat Collector-emitter saturation voltage IC=10A ;IB=100mA
VBEsat
Base-emitter saturation voltage
IC=10A ;IB=100mA
VBE
Base-emitter on voltage
IC=5A ; VCE=4V
ICEO
Collector cut-off current
VCE=60V; IB=0
ICEX
Collector cut-off current
VCE=100V; VBE(off)=-1.5V
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
500
hFE-2
DC current gain
IC=15A ; VCE=4V
100
V
3
V
4
V
2.8
V
1.0
mA
0.5
mA
3.0
mA
2