DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2N6400 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
2N6400 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
*Peak Forward OnState Voltage (ITM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%)
* Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
* Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
TC = 25°C
TC = 40°C
Gate NonTrigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125°C
* Holding Current
TC = 25°C
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
*TC = 40°C
Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)
Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)
TC = 25°C
TJ = +125°C
DYNAMIC CHARACTERISTICS
Critical RateofRise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform)
TJ = +125°C
*Indicates JEDEC Registered Data.
Symbol
RqJC
TL
Symbol
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Max
Unit
1.5
°C/W
260
°C
Min Typ Max Unit
10
mA
2.0
mA
1.7
V
9.0 30
mA
60
V
0.7 1.5
2.5
0.2
V
18
40
mA
60
1.0
ms
ms
15
35
50
V/ms
http://onsemi.com
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]