2N6259 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2N6259

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N6259

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A

VBE(on) Base-Emitter On Voltage

IC= 8A ; VCE= 2V

ICEO

Collector Cutoff Current

VCE= 130V; IB= 0

ICEX

Collector Cutoff Current

ICBO

Collector Cutoff Current

VCE= 150V; VBE(off)= 1.5V

VCB= 150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 8A ; VCE= 2V

hFE-2

DC Current Gain

IC= 16A ; VCE= 4V

MIN MAX UNIT

150

V

1.0

V

2.5

V

2.0

V

10 mA

2.0 mA

2.0 mA

5.0 mA

15

60

10

isc Website：www.iscsemi.cn

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