2N5599 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic
Número de pieza
componentes Descripción
Fabricante
2N5599 Datasheet PDF : 3 Pages
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Product Specification
www.jmnic.com
Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector-emitter saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N5597
VCBO
Collector-base voltage 2N5599/5601 Open emitter
2N5603
2N5597
VCEO
Collector-emitter voltage 2N5599/5601 Open base
2N5603
VEBO
Emitter-base voltage
Open collector
IC
Collector current
PD
Total power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
60
80
100
80
100
120
5
2
20
150
-65~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
JMnic
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