2N5458 Ver la hoja de datos (PDF) - ON Semiconductor
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2N5458 Datasheet PDF : 5 Pages
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2N5457, 2N5458
Preferred Device
JFETs − General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
• N−Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
• High DC Input Resistance
• Low Transfer and Input Capacitance
• Low Cross−Modulation and Intermodulation Distortion
• Unibloc Plastic Encapsulated Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Source Voltage
Drain −Gate Voltage
Reverse Gate −Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VDG
VGSR
IG
PD
25
Vdc
25
Vdc
−25
Vdc
10
mAdc
310
mW
2.82
mW/°C
Operating Junction Temperature
TJ
135
°C
Storage Temperature Range
Tstg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 5
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
MARKING
DIAGRAM
2N
TO−92
CASE 29
STYLE 5
545x
AYWWG
G
123
2N545x = Device Code
x = 7 or 8
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
2N5457
2N5457G
2N5458
TO−92
TO−92
(Pb−Free)
TO−92
1000 Units/Box
1000 Units/Box
1000 Units/Box
2N5458G
TO−92
(Pb−Free)
1000 Units/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5457/D
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