2N5551N Ver la hoja de datos (PDF) - AUK -> KODENSHI CORP
Número de pieza
componentes Descripción
Fabricante
2N5551N Datasheet PDF : 4 Pages
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2N5551N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
180
160
6
600
400
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
BVCEO
ICBO
IEBO
IC=1mA, IB=0
VCB=180V, IE=0
VEB=6V, IC=0
DC current gain
hFE (1)
VCE=5V, IC=1mA
DC current gain
hFE (2)
VCE=5V, IC=10mA
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE (3)
VCE(sat)(1)*
VCE(sat)(2)*
VBE(sat)(1)*
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-emitter saturation voltage
VBE(sat)(2)* IC=50mA, IB=5mA
Base-emitter voltage
VBE
VCE=5V, IC=10mA
Transition frequency
fT
VCE=10V, IC=10mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
160
-
-
V
-
-
100 nA
-
-
100 nA
80
-
-
80
-
250
-
30
-
-
-
-
0.2
V
-
-
0.5
V
-
-
1
V
-
-
1
V
-
0.65 0.85
V
-
150
-
MHz
-
3
-
pF
KSD-T0C035-001
2
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