2N4911 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2N4911

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N4911

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V(Min)

·Low Collector Saturatioin Voltage-

: VCE(sat)= 0.6V(Max.)@ IC= 1A

·Wide Area of Safe Operation

APPLICATIONS

·Designed for driver circuits, switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO Collector-Base Voltage

60

VCEO Collector-Emitter Voltage

60

VEBO Emitter-Base Voltage

5

IC

Collector Current-Continuous

1

ICM

Collector Current-Peak

4

IB

Collector Current-Continuous

1

Collector Power Dissipation

PC

@ TC=25℃

25

TJ

Junction Temperature

200

Tstg

Storage Temperature Range

-65~200

UNIT

V

V

V

A

A

A

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

7.0 ℃/W

isc Website：www.iscsemi.cn

Share Link: