AS6UA5128-BC Ver la hoja de datos (PDF) - Alliance Semiconductor

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AS6UA5128-BC

2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM

Alliance Semiconductor 

September 2001

AS6UA5128

Š

2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM

Features

• AS6UA5128

• Intelliwatt™ active power circuitry

• Industrial and commercial temperature ranges available

• Organization: 524,288 words × 8 bits

• 2.7V to 3.6V at 55 ns

• 2.3V to 2.7V at 70 ns

• Low power consumption: ACTIVE

- 144 mW at 3.6V and 55 ns

- 68 mW at 2.7V and 70 ns

• Low power consumption: STANDBY

- 72 µW max at 3.6V

- 41 µW max at 2.7V

- 28 µW max at 2.3V

• 1.5V data retention

• Equal access and cycle times

• Easy memory expansion with CS, OE inputs

• Smallest footprint packages

- 36(48)-ball FBGA

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA

Logic block diagram

Pin arrangement

VCC

GND

Input buffer

36(48)-CSP/BGA Package (shading indicates no ball)

1

2

3

4

5

6

A

A0

A1

NC

A3

A6

A8

A0

A1

A2

A3

512K×8

A4

Array

A5

A6

(4,194,304)

A7

A8

B I/O5 A2

WE

A4

A7 I/O1

I/O8

C I/O6

NC

A5

I/O2

D

VSS

VCC

E

VCC

I/O1

F I/O7

A18

A17

VSS

I/O3

Column decoder

Control

WE

circuit

OE

CS

G I/O8 OE

CS

A16 A15 I/O4

H

A9

A10

A11

A12

A13

A14

Selection guide

VCC Range

Min

Typ2

Max

Product

(V)

(V)

(V)

AS6UA5128

2.7

3.0

3.6

AS6UA5128

2.3

2.5

2.7

Speed

(ns)

55

70

Power Dissipation

Operating (ICC)

Max (mA)

Standby (ISB1)

Max (µA)

2

20

1

15

9/21/01; v.1.2

Alliance Semiconductor

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