2N3998 Ver la hoja de datos (PDF) - Microsemi Corporation

Número de pieza

componentes Descripción

Fabricante

2N3998

NPN POWER SWITCHING SILICON TRANSISTOR

Microsemi Corporation 

2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (4)

Forward-Current Transfer Ratio

IC = 50 mAdc, VCE = 2.0 Vdc

2N3996, 2N3998

IC = 1.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 5.0 Vdc

IC = 50 mAdc, VCE = 2.0 Vdc

2N3997, 2N3999

IC = 1.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 5.0 Vdc

Collector-Emitter Saturation Voltage

IC = 1.0 Adc, IB = 0.1 Adc

IC = 5.0 Adc, IB = 0.5 Adc

Base-Emitter Saturation Voltage

IC = 1.0 Adc, IB = 0.1 Adc

IC = 5.0 Adc, IB = 0.5 Adc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 1.0 Adc, VCE = 5.0 Vdc, f = 10 MHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SAFE OPERATING AREA

DC Tests

TC = 1000C, 1 Cycle, t = 1.0 s

Test 1

VCE = 80 Vdc, IC = 0.08 Adc

Test 2

VCE = 20 Vdc, IC = 1.5 Adc

(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

Cobo

Min. Max. Unit

30

40

120

15

60

80

240

20

0.25

Vdc

2.0

0.6

1.2

Vdc

1.6

3.0

12

150

pF

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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