JAN2N3634 Ver la hoja de datos (PDF) - Microsemi Corporation
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JAN2N3634 Datasheet PDF : 2 Pages
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TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
2N3634*
2N3635*
2N3636*
2N3637*
Unit
Collector-Emitter Voltage
VCEO
140
175
Vdc
Collector-Base Voltage
VCBO
140
175
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
PT
1.0
Adc
1.0
W
5.0
W
Operating & Storage Junction Temperature Range TJ, Tstg
-65 to +200
0C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc
Emitter-Base Cutoff Current
ICBO
2N3634, 2N3635
VEB = 3.0 Vdc
IEBO
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc
ICEO
Min.
140
175
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
Max.
Unit
Vdc
ηAdc
100
µAdc
10
ηAdc
50
µAdc
10
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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