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2N2222AC3A Datasheet PDF : 3 Pages
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SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A 2N2222AC3B 2N2222AC3C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
ICES
ICBO
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Cut-Off Current
Collector-Base
Cut-Off Current
IC = 10mA
VCE = 50V
IE = 0
IE = 0
IB = 0
VCB = 75V
VCB = 60V
TA = 150°C
IEBO
Emitter Cut-Off Current
IC = 0
VEB = 4V
VEB = 6V
ON CHARACTERISTICS
VCE(Sat) (1)
Collector-Emitter
Saturation Voltage
VBE(Sat) (1)
Base-Emitter
Saturation Voltage
hFE
DC Current Gain
IC = 150mA
IC = 500mA
IC = 150mA
IC = 500mA
IC = 0.1mA
IC = 1.0mA
IC = 10mA
IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
IB = 15mA
IB = 50mA
VCE = 10V
VCE = 10V
VCE = 10V
TA = -55°C
VCE = 10V (1)
VCE = 10V (1)
Min. Typ. Max. Units
50
V
50
nA
10
µA
10
nA
10
µA
10
nA
10
µA
0.3
V
1.0
0.6
1.2
V
2.0
50
75
325
100
-
35
100
300
30
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10V IE = 0
f = 1.0MHz
Cibo
|hfe|
hfe
Input Capacitance
VEB = 0.5V IC = 0
f = 1.0MHz
Magnitude of small-
signal, short-circuit
forward current transfer
IC = 20mA
VCE = 20V
f = 100MHz
2.5
ratio
Small Signal Current
Gain
IC = 1.0mA VCE = 10V f = 1.0kHz
50
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
8
pF
25
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Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9192
Website: http://www.semelab-tt.com
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