2N1771 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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Fabricante
2N1771 Datasheet PDF : 2 Pages
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CHARACTERISTICS
C11 SERIES
T«t
Peak Reverse and Forward
Blocking Current!
C11U (2N1770)
C11F (2N1771)
C11A (2N1772)
C11G (2N1773)
CUB (2N1774)
C11H (2N1775)
C11C (2N1776)
C11D (2N1777)
CUE (2N1778)
CUM (2N2619)
Full Cycle Avg. Reverse and
Forward Blocking Currentf
C11U (2N1770)
C11F (2N1771)
C11A (2N1772)
C11G (2N1773)
CUB (2N1774)
C11H (2N1775)
C11C (2N1776)
CUD (2N1777)
CUE (2N1778)
CUM (2N2619)
Gate Current to Fire
Symbol
Min,
in and is
Il«.U 1
and
Is(AV)
——
Ir.f
Gate Voltage to Fire
V,;f
0.3*
Peak Forward Voltage Drop
VK
Holding Current
Turn-on Time
In
t, + tr
Turn-off Time
t,,rr
Thermal Resistance
_
0.,-r
TYP- Max.
4,5
9.0
4.5
9.0
4.5
9.0
4.0
8.0
3.0
6.0
2.5
5.0
1.5
4.0
1.0
2.0
1.0
2.0
1.0
2.0
Unit.
Tett Condition! 2IM 1770-78
T.i = 125°C, Gate Open
ma VA(- = V.-»= 25 Volts Peak
ma
50
ma
100
ma
150
ma
200
ma
250
ma
300
ma
400
ma
500
ma
600
2N2619
Tr = GO°C, L. = 4.7A, half sine wave
180° Conduction Angle
2.3
4.5* mAdc v , , = v r A — 25 Volts Peak
2.3
4.5* mAdc
50
2.3
4.5* mAdc
100
2.0
4.0* mAdc
150
1.5
3.0* mAdc
200
1.3
2.5* mAdc
250
0.8
2.0* mAdc
300
0.5
1.0* mAdc
400
0.5
1.0* mAdc
500
0.5
1.0* mAdc
600
10
15
mAdc V.M = 12Vdc, T., = 25°C, Rr. =; 250 ohms
20
30* mAdc V
1 9VH/i T fit;0*"' T?
4
8
mAdc V
lO\fAn T lQt\°n P
1.3
2.0* Vdc V.,.- = 12 Vdc, T., = -65° to + 125°C,
R,. = 250 ohms
0.7
Vdc vAI- - Rated, T., - 125°C, R,. -= 250 ohms
1.6
1.85
V
T.i = 25°C, it- — 15 a (single sinusoidal
pulse, 4 ms wide)
8.0
mAdc
25"C
1.0
Msec
T
9t\°r* i
1fl a v
Pa ted Gate
Supply: 7 volt open circuit 20 ohm, 0.1
Msec max. rise time.
15
iusec T 1 9*\C* i fi a i £ a
v,v< (Reapplied) = Rated. Rate of Rise of
Reapplied Forward Blocking Voltage =
20 volts per microsecond maximum.
1.5
3.1 "C/Watt Junction to Case,
fValues apply for zero or negative gate voltage. Maximum case to ambient thermal resistance for which maximum PRV
ratings apply = 18°C per watt.
"Indicates data included on JEDEC type number registration.
INSTANTANEOUS FORWARD VOLTAQE DROP-VOLTS
1. MAXIMUM FORWARD CHARACTERISTICS
CONDUCTING STATE
2
1
6
a
10
12
INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS
2. MAXIMUM FORWARD CHARACTERISTICS
HIGH CURRENT LEVEL — CONDUCTING STATE
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