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2MBI100HB-120-50 Ver la hoja de datos (PDF) - Fuji Electric

Número de pieza
componentes Descripción
Fabricante
2MBI100HB-120-50
Fuji
Fuji Electric Fuji
2MBI100HB-120-50 Datasheet PDF : 6 Pages
1 2 3 4 5 6
http://www.fujielectric.com/products/semiconductor/
2MBI100HB-120-50
HIGH SPEED IGBT MODULE
1200V / 100A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Soft-switching Application
Industrial machines, such as Welding machines
IGBT Modules
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Ic
Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector Power Dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5)
Note *3: Recommendable Value : Terminals 2.5 to 3.5 Nm (M5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-off time
Forward on voltage
Lead resistance, terminal-chip (*4)
Note *4: Biggest internal terminal resistance among arm.
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
toff
tf
VF
(terminal)
VF
(chip)
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
Tj=25°C
VGE = 15V
Tj=125°C
IC = 100A
Tj=25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V, IC = 100A
VGE = ±15V, RG = 3.1Ω
Ls = 20nH
Tj=25°C
VGE = 0V
Tj=125°C
IF = 50A
Tj=25°C
Tj=125°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact Thermal resistance (1 device) (*5)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Maximum ratings
1200
±20
150
100
300
200
50
100
1040
+150
-40 ~ +125
2500
3.5
3.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
-
-
1.0
-
-
200
5.7
6.2
6.7
-
3.30 3.60
-
4.20
-
-
3.10 3.40
-
4.00
-
-
9
-
-
0.30 0.60
0.05 0.20
-
1.85 2.30
-
2.00
-
-
1.70 2.15
-
1.85
-
-
1.55
-
Units
mA
nA
V
V
nF
µs
V
Characteristics
min. typ. max.
-
-
0.12
-
-
0.65
-
0.05
-
Units
°C/W
1

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