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28F016SC

BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY 4, 8, AND 16 MBIT

Intel 

BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY

E

Sym

WE#

RY/BY#

VPP

VCC

GND

NC

Table 3. Pin Descriptions (Continued)

Type

Name and Function

INPUT WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data

are latched on the rising edge of the WE# pulse.

OUTPUT READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is

performing an internal operation (block erase, program, or lock-bit configuration).

RY/BY#-high indicates that the WSM is ready for new commands, block erase or

program is suspended, or the device is in deep power-down mode. RY/BY# is

always active.

SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:

For erasing array blocks, programming data, or configuring lock-bits.

SmartVoltage Flash → 3.3 V, 5 V, and 12 V VPP

With VPP ≤ VPPLK, memory contents cannot be altered. Block erase, program, and

lock-bit configuration with an invalid VPP (see DC Characteristics) produce spurious

results and should not be attempted.

SUPPLY DEVICE POWER SUPPLY: Internal detection automatically configures the device

for optimized read performance. Do not float any power pins.

SmartVoltage Flash → 2.7 V (Read-Only), 3.3 V, and 5 V VCC

With VCC ≤ VLKO, all write attempts to the flash memory are inhibited. Device

operations at invalid VCC voltages (see DC Characteristics) produce spurious

results and should not be attempted. Block erase, program, and lock-bit

configuration operations with VCC < 3.0 V are not supported.

SUPPLY GROUND: Do not float any ground pins.

NO CONNECT: Lead is not internally connected; it may be driven or floated.

8

PRELIMINARY

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