SC91415AP Ver la hoja de datos (PDF) - Silan Microelectronics
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SC91415AP Datasheet PDF : 23 Pages
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Silan
Semiconductors
SC91415 SERIES
ELECTRICAL CHARACTERISTICS
(Tamb=25°C, VDD=2.5V, fosc=3.579545MHz, All voltage referenced to VSS, unless otherwise specified)
Parameter
Operating Voltage
Symbol
Test Conditions
Tone
VDD
Pulse
unload
Min
Typ
Max Unit
2.0
--
5.5
V
2.0
--
5.5
Operating Current ( HKS =0)
Pulse
Tone
IDD
Pulse
Tone
--
Unload
--
with pull up/down --
resistor *8
--
0.15
0.3
0.3
0.5
mA
0.15
0.3
0.3
0.5
Standby Current
Memory Retention Current
HKS , HFI & DRING pins:
Input Voltage
Istby
ON-HOOK
Unload
OFF-HOOK
ON-HOOK with pull up/down
OFF-HOOK resistor *8
--
0.1
1.0
µA
Imrt ON-HOO K VDD=1.0V
--
0.001
0.1
µA
Vil --
Vih --
VSS
0.8VDD
0.2VDD
V
VDD
HFO & HDO Pins Source Current Ioh Vo=2.0V
PO , XMUTE , RMUTE & SDO Ioh Vo= VDD
Pins Leakage Current
0.2
--
--
mA
--
--
±0.001 µA
PO ,HFO, XMUTE , RMUTE &
Iol Vo=0.5V
SDO Pins Sink Current
-0.2
--
--
mA
DRING pin input resistance
Rdring Vdring = VSS
--
100
--
kΩ
HFI Pin Input Resistance
Rhfi Vhfi = VSS
--
200
--
kΩ
Keyboard Scanning Pins
Output Current(except COL4/KT)
COL4/KT Source Current
Sink Current
Ioh Vksn=VSS
Iol Vksn=VDD
Ioh Vo=2.0V
Iol Vo=0.5V
2
10
50
2
10
50
µA
0.2
--
0.2
--
--
mA
--
Keyboard debounce time
Tdb --
--
20
--
ms
Frequency
Key Tone Signal
Duration
fkt --
Tkt --
--
600
--
Hz
--
30
--
ms
Pause Time
Tp --
--
3.6
--
Sec.
Pulse to Tone Waiting Time
Tpt --
--
3.6
--
Sec.
Row3B, Row4B=NR,NR
--
600
--
Flash Time
Row3B, Row4B=NR,R-Vss
Tf
Row3B, Row4B=R-Vss,NR
100
ms
80
Row3B, Row4B=R-Vss,R-Vss --
300
--
(to be continued)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 2.0
2001-11-13
5
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