DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1SV293(2003) Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
1SV293 Datasheet PDF : 2 Pages
1 2
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV293
VCO for UHF Band Radio
· Ultra low series resistance: rs = 0.26 (typ.)
· Useful for small size set
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
Unit
10
V
125
°C
-55~125
°C
1SV293
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 1 V, f = 470 MHz
Marking
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10
¾
¾
V
¾
¾
3
nA
18.0 ¾ 20.0 pF
10.1 ¾ 11.6 pF
1.55 ¾
¾
¾
¾ 0.26 0.4
W
1
2003-03-24

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]