1SS401 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

1SS401

Schottky Barrier Diode

Galaxy Semi-Conductor 

BL Galaxy Electrical

Schottky Barrier Diode

FEATURES

z Small total capacitance.

z Low reverse current.

z Low forward voltage:VF=0.38V(typ).

Pb

Lead-free

Production specification

1SS401

APPLICATIONS

z For general purpose applications.

ORDERING INFORMATION

Type No.

Marking

1SS401

D9

SOT-323

Package Code

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

VRM

25

V

Diode reverse voltage

VR

20

V

Forward continuous Current

IF

700

mA

Average rectified output current

IO

300

mA

Power Dissipation

Pd

100

mW

Junction temperature

Tj

125

℃

Storage temperature range

Tstg

-55-+125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse breakdown voltage

Reverse current

Symbol

V(BR)R

IR

Forward voltage

VF

Diode capacitance

CD

Test conditions

IR=100μA

VR=20V

IF=1mA

IF=10mA

IF=300mA

VR=0V, f=1MHz

MIN Typ.

20

0.16

0.22

0.38

46

MAX

50

UNIT

V

μA

V

0.45

pF

Document number: BL/SSSKF014

Rev.A

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