1SS377(2001) Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

1SS377
(Rev.:2001)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

Toshiba 

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS377

High Speed Switching

1SS377

Unit in mm

Low forward voltage

Small package

: VF = 0.23V (typ.) @IF = 5mA

: SC-59

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

Junction temperature

Storage temperature range

Operating temperature range

VRM

VR

IFM

IO

IFSM

P

Tj

Tstg

Topr

15

10

200 *

100 *

1*

150

125

−55∼125

−40∼100

*:

Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

V

V

mA

mA

A

mW

°C

°C

°C

JEDEC

EIAJ

TO-236MOD

SC-59

TOSHIBA

Weight: 0.012g

1-3G1F

Characteristic

Forward voltage

Reverse current

Total capacitance

Symbol

VF (1)

VF (2)

VF (3)

IR

CT

Test

Circuit

Test Condition

― IF = 1mA

― IF = 5mA

― IF = 100mA

― VR = 10V

― VR = 0, f = 1MHz

Min Typ. Max Unit

― 0.18 ―

―

0.23 0.30

V

― 0.35 0.50

―

―

20

µA

―

20

40

pF

Equivalent Circuit (Top View)

Marking

1

2001-06-13

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