1SS108 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

1SS108

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Hitachi -> Renesas Electronics 

1SS108

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Average rectified current

Junction temperature

Storage temperature

Symbol

VR

IO

Tj

Tstg

Value

Unit

30

V

15

mA

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward current

IF

Reverse current

IR

Capacitance

C

Rectifier efficiency

η

3.0 —

—

—

—

—

70

—

—

mA

VF = 1V

100 µA

VR = 10V

3.0

pF

VR = 1V, f = 1MHz

—

%

Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL

= 20pF

ESD-Capability

—

70

—

—

V

*C = 200pF, Both forward and

reverse direction 1 pulse.

Note: Failure criterion; IR ≥ 200µA at VR = 10V

10–1

10–2

10–3

10–4

10–5

10–6

0

0.4 0.8 1.2 1.6 2.0

Forward voltage VF (V)

Fig.1 Forward current Vs. Forward voltage

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