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A28F200BX-B Datasheet PDF : 33 Pages
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A28F200BX-T B
1 0 PRODUCT FAMILY OVERVIEW
Throughout this datasheet the A28F200BX refers to
both the A28F200BX-T and A28F200BX-B devices
Section 1 provides an overview of the 2-Mbit flash
memory family including applications pinouts and
pin descriptions Section 2 describes in detail the
specific memory organization Section 3 provides a
description of the family’s principles of operation Fi-
nally the family’s operating specifications are de-
scribed
1 1 Main Features
The A28F200BX boot block flash memory family is a
very high performance 2-Mbit (2 097 152 bit) memo-
ry family organized as either 128-KWords (131 072
words) of 16 bits each or 256-Kbytes (262 144
bytes) of 8 bits each
Five Separately Erasable Blocks including a hard-
ware-lockable boot block (16 384 Bytes) two pa-
rameter blocks (8 192 Bytes each) and two main
blocks (1 block of 98 304 Bytes and 1 block of
131 072 Bytes) are included on the 2-Mbit family An
erase operation erases one of the main blocks in
typically 3 seconds and the boot or parameter
blocks in typically 1 5 seconds Each block can be
independently erased and programmed 1 000 times
The Boot Block is located at either the top
(A28F200BX-T) or the bottom (A28F200BX-B) of the
address map in order to accommodate different mi-
croprocessor protocols for boot code location The
hardware lockable boot block provides the most
secure code storage The boot block is intended to
store the kernel code required for booting-up a sys-
tem When the RP pin is between 11 4V and 12 6V
the boot block is unlocked and program and erase
operations can be performed When the RP pin is
at or below 6 5V the boot block is locked and pro-
gram and erase operations to the boot block are
ignored
The A28F200BX products are available in the ROM
EPROM compatible pinout and housed in the
44-Lead PSOP (Plastic Small Outline) package as
shown in Figure 3
The Command User Interface (CUI) serves as the
interface between the microprocessor or microcon-
troller and the internal operation of the A28F200BX
flash memory
Program and Erase Automation allows program
and erase operations to be executed using a two-
write command sequence to the CUI The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations including verifications there-
by unburdening the microprocessor or microcontrol-
ler Writing of memory data is performed in word or
byte increments for the A28F200BX family typically
within 9 ms which is a 100% improvement over pre-
vious flash memory products
The Status Register (SR) indicates the status of the
WSM and whether the WSM successfully completed
the desired program or erase operation
Maximum Access Time of 90 ns (TACC) is achieved
over the automotive temperature range (b40 C to
125 C) 10% VCC supply voltage range and 100 pF
output load
IPP maximum Program current is 40 mA for x16
operation and 30 mA for x8 operation IPP Erase
current is 30 mA maximum VPP erase and pro-
gramming voltage is 11 4V to 12 6V (VPP e 12V
g5%) under all operating conditions Typical ICC
Active Current of 25 mA is achieved
The 2-Mbit boot block flash family is also designed
with an Automatic Power Savings (APS) feature to
minimize system battery current drain and allow for
very low power designs Once the device is ac-
cessed to read array data APS mode will immedi-
ately put the memory in static mode of operation
where ICC active current is typically 1 mA until the
next read is initiated
When the CE and RP pins are at VCC and the
BYTE pin is at either VCC or GND the CMOS
Standby mode is enabled where ICC is typically
80 mA
A Deep Power-Down Mode is enabled when the
RP pin is at ground minimizing power consumption
and providing write protection during power-up con-
ditions ICC current during deep power-down mode
is 50 mA typical An initial maximum access time or
Reset Time of 300 ns is required from RP switch-
ing until outputs are valid Equivalently the device
has a maximum wake-up time of 210 ns until writes
to the Command User Interface are recognized
3
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