A28F200BX-B Ver la hoja de datos (PDF) - Intel

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Fabricante

A28F200BX-B

2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

Intel 

A28F200BX-T B

DC CHARACTERISTICS (Continued)

Symbol

Parameter

Notes Min Typ Max Unit

Test Condition

ICCD VCC Deep Power-Down Current

1

ICCR VCC Read Current for

15

A28F200BX Byte-Wide and

6

Word-Wide Mode

80 mA RP e GND g0 2V

60 mA VCC e VCC Max CE e GND

f e 10 MHz IOUT e 0 mA

CMOS Inputs

65 mA VCC e VCC Max CE e VIL

f e 10 MHz IOUT e 0 mA

TTL Inputs

ICCW VCC Write Current

14

ICCE VCC Block Erase Current

14

ICCES VCC Erase Suspend Current

12

IPPS VPP Standby Current

1

IPPD VPP Deep Power-Down Current

1

IPPR VPP Read Current

1

IPPW VPP Word Write Current

14

65 mA Word Write in Progress

30 mA Block Erase in Progress

5

10 mA Block Erase Suspended

CE e VIH

15

mA VPP s VCC

5 0 mA RP e GND g0 2V

200 mA VPP l VCC

40

mA VPP e VPPH

Word Write in Progress

IPPW VPP Byte Write Current

14

30

mA VPP e VPPH

Byte Write in Progress

IPPE VPP Block Erase Current

14

30

mA VPP e VPPH

Block Erase in Progress

IPPES VPP Erase Suspend Current

1

200 mA VPP e VPPH

Block Erase Suspended

IRP

IID

VID

VIL

VIH

VOL

VOH

VPPL

VPPH

VLKO

VHH

RP Current

A9 Intelligent Identifier Current

A9 Intelligent Identifier Voltage

Input Low Voltage

14

14

11 5

b0 5

500

500

13 0

08

mA RP e VHH

mA A9 e VID

V

V

Input High Voltage

Output Low Voltage

Output High Voltage

VPP during Normal Operations

3

VPP during Erase Write Operations 7

VCC Erase Write Lock Voltage

RP Unlock Voltage

20

VCC a 0 5 V

0 45

V VCC e VCC Min

IOL e 5 8 mA

24

V VCC e VCC Min

IOH e b2 5 mA

00

65 V

11 4 12 0 12 6 V

20

V

11 5

13 0 V Boot Block Write Erase

23

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