ILD610-4(2000) Ver la hoja de datos (PDF) - Infineon Technologies
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ILD610-4 Datasheet PDF : 3 Pages
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FEATURES
• Dual Version of SFH610 Series
• High Current Transfer Ratios
ILD610-1, 40-80%
ILD610-2, 63-125%
ILD610-3, 100-200%
ILD610-4, 160-320%
• Isolation Test Voltage, 5300 VRMS
• VCEsat 0.25 (≤0.4) V at IF=10 mA, IC=2.5 mA
• VCEO=70 V
• Underwriters Lab File #E52744
• V VDE #0884 Available with Option 1
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DESCRIPTION
The ILD610 Series is a dual channel optocoupler
series for high density applications. Each channel
consists of an optically coupled pair with a Gallium
Arsenide infrared LED and a silicon NPN pho-
totransistor. Signal information, including a DC
level, can be transmitted by the device while main-
taining a high degree of electrical isolation between
input and output. The ILD610 Series is the dual ver-
sion of SFH610 Series and uses a repetitive pin-out
configuration instead of the more common alternat-
ing pin-out used in most dual couplers.
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage ............................................... 6.0 V
Surge Forward Current (t ≤10 ms) ................... 1.5 A
Total Power Dissipation ............................... 100 mW
Derate Linearly from 25°C....................... 1.3 mW/°C
DC Forward Current ....................................... 60 mA
Detector
Collector-Emitter Voltage................................... 70 V
Collector Current ............................................ 50 mA
Collector Current (t ≤1.0 ms)........................ 100 mA
Total Power Dissipation ............................... 150 mW
Derate Linearly from 25°C....................... 2.0 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ........... 5300 VRMS
Isolation Resistance
VIO=500 V, TA=25°C ................................ ≥1012 Ω
VIO=500 V, TA=100°C .............................. ≥1011 Ω
Storage Temperature .................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Junction Temperature .....................................100°C
Lead Soldering Time at 260°C......................10 sec.
ILD610
Dual Phototransistor
Optocoupler
Dimensions in inches (mm)
pin one ID
4 321
.255 (6.48)
.268 (6.81)
5 678
Anode 1
Cathode 2
Anode 3
8 Emitter
7 Collector
6 Emitter
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.379 (9.63)
.390 (9.91)
Cathode 4
5 Collector
.031 (0.79)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Electrical Characteristics TA=25°C
Symbol
Emitter
Forward Voltage
VF
Reverse Current
IR
Capacitance
CO
Detector
Breakdown Voltage
Collector-Emitter Dark
Current
Capacitance
BV CEO
BV CEO
ICEO
C CE
Package
Collector-Emitter Saturation
Voltage
Coupling Capacitance
VCEsat
CC
Typ.
1.25
(≤1.65)
0.01 (≤10)
25
90 (≥70)
7.0 (≥6.0)
2.0 (≤50)
7.0
0.25
(≤0.40)
0.35
Unit
V
µA
pF
V
nA
pF
V
pF
Condition
IF=60mA
VR=6.0 V
VR=0 V
f=1.0 MHz
IC=10 mA
IE=10 µA
VCE=10 V
VCE=5.0 V
f=1.0 MHz
IF=10 mA
IC=2.5 mA
—
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
March 1, 2000-08
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