ILH200 Ver la hoja de datos (PDF) - Infineon Technologies
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Fabricante
ILH200 Datasheet PDF : 4 Pages
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Characteristics (Each Channel) TA=25°C, unless otherwise specified
Parameter
Symbol Min. Typ. Max.
Emitter
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
VF
— 1.46 1.7
V BR
6.0 — —
IR
— 0.01 10
CJ
— 20 —
R TH
— 220 —
Collector-Emitter Saturation Voltage
VCE(sat) —
Collector-Emitter Leakage Current
ICEO
—
Capacitance
C CE
—
Thermal Resistance
R TH
—
Coupled Characteristic –55°C to 100°C
0.25 0.4
5.0 50
6.8 —
220 —
Saturated Current Transfer Ratio
CTR(sat) 70
210 250
Current Transfer Ratio Collector-Emitter CTRce 100 300 450
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Package Capacitance
Insulation Resistance
Leakage Current, Input–Output
CM H
CM L
C IO
R IO
IIO
1000 2000 —
1000 2000 —
— 1.5 —
1011 1014 —
— — 10
Unit
V
V
µA
pF
°C/W
V
nA
pF
°C/W
%
%
V /µ s
V /µ s
pF
W
µA
Condition
IF=60 mA
IR=10 µA
VR=6.0 V
VF=0 V, f=1.0 MHz
Junction to Lead
IB=20 µA, ICE=1.0 mA
VCE=10 V
VCE=5.0 V, f=1.0 MHz
Junction to Lead
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
VCM=500 Vp-p, VCC=5.0 V, RL=1.0 KΩ, IF=0 mA
VCM=500 Vp-p, VCC=5.0 V, RL=1.0 KΩ, IF=10 mA
VIO=0 V, 1.0 MHz
VIO=500 VDC
Relative Humidity ≤50%, VIO 3000 VDC, 5.0 sec.
Typical Switching Speeds TA=25°C
Non-Saturated Switching Symbol
Delay
Rise
Storage
Fall
Propagation–High to Low
Propagation–Low to High
Saturated Switching(1)
td
tr
ts
tf
t pHL
t pLH
Symbol
Delay
td
Rise
tr
Storage
ts
Fall
tf
Propagation–High to Low tpHL
Propagation–Low to High tpLH
Typ.
0.8
2.0
0.4
2.0
1.0
1.5
Typ.
0.7
1.0
13.5
12
1.4
15
Max. Unit
2.0
µs
5.0
µs
1.5
µs
5.0
µs
3.0
µs
4.0
µs
Max. Unit
2.0
µs
3.0
µs
30
µs
30
µs
5.0
µs
40
µs
Test Condition
VCC=5.0 V
RL=75 Ω
IF=10 mA
50% of Vpp
Test Condition
VCE=0.4 V
RL=1.0 KΩ
IF=10 mA
VCC=5.0 V, VTH=1.5 V
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
2
ILH200
April 29, 1999
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