HMMC-5025RF Ver la hoja de datos (PDF) - HP => Agilent Technologies
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Fabricante
HMMC-5025RF Datasheet PDF : 7 Pages
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HMMC-5025 DC Specifications/Physical Properties [1]
Symbol Parameters and Test Conditions
Units
IDSS
Vp
VG2
IDSOFF(VG1)
IDSOFF(VG2)
θch-bs
Saturated Drain Current
(VDD = 5.0 V, VG1 = 0.0 V, VG2 = open circuit)
First Gate Pinch-off Voltage
(VDD = 5.0 V, IDD = 15 mA, VG2 = open circuit)
Second Gate Self-Bias Voltage
(VDD = 5.0 V, IDD = 75 mA)
First Gate Pinch-off Current
(VDD = 5.0 V, VG1 = -3.5 V, VG2 = open circuit)
Second Gate Pinch-off Current
(VDD = 5.0 V, IDD = 75 mA, VG2 = -3.5 V)
Thermal Resistance (Tbackside = 25°C)
mA
V
V
mA
mA
°C/W
Note:
1. Measured in wafer form with Tchuck = 25°C. (Except θch-bs.)
Min.
130
-1.7
Typ.
150
2
6
10
63
Max.
170
-0.5
10
HMMC-5025 RF Specifications[1], VDD = 5.0 V, IDD(Q) = 75 mA, Z in = Z o = 50 Ω
Symbol
BW
Parameters and Test Conditions
Guaranteed Bandwidth[2]
Units Min. Typ. Max.
GHz
2
50
S21
∆ S21
RLin
RLout
S12
P-1dB
Psat
H2
Small Signal Gain
Small Signal Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @ 1dB Gain Compression @ 40 GHz
Saturated Output Power @ 40 GHz
Second Harmonic Power Level (2 < ƒo < 26)
Po(ƒo) = 10 dBm
dB
dB
dB
dB
dB
dBm
dBm
dBc
7.0 8.5
± 0.75 ± 1.5
10 15
10 15
20 30
12
16
-35
H3
Third Harmonic Power Level (2 < ƒo < 20)
Po(ƒo) = 10 dBm
dBc
-25
NF
Noise Figure (2 – 35 GHz)
Noise Figure (35 – 50 GHz)
dB
5.0
7.0
Notes:
1. Small-signal data measured in wafer form with Tchuck = 25°C. Harmonic data measured on individual devices mounted
in a microcircuit package at TA = 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.
6-41
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