HMMC-5022DC Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
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Fabricante
HMMC-5022DC Datasheet PDF : 6 Pages
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Applications
The HMMC-5021/22/26 series of
traveling wave amplifiers are
designed for use as general
purpose wideband gain blocks in
communication systems and
microwave instrumentation. They
are ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 26.5 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are de-
signed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(VDD) and a single negative gate
supply (VG1). The recommended
bias conditions for the
HMMC-5021/22/26 are VDD = 7.0V,
IDD = 150 mA for best overall
performance. To achieve this
drain current level, VG1 is typi-
cally biased between -0.2V and
-0.5V. No other bias supplies or
connections to the device are
required for 2 to 26.5 GHz opera-
tion. See Figure 3 for assembly
information.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below ≈ 1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (VG2) can be
used to obtain 35 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact and its
self-bias voltage is ≈ +2.1 V.
Applying an external bias
between its open-circuit voltage
and -2.5 volts will adjust the gain
while maintaining a good
input/output port match.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22 ± 1 gram, stage
temperature should be 150 ± 2°C,
and ultrasonic power and dura-
tion should be 64 ± 1 dB and
76␣ ± ␣ 8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see HP application note #999,
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Drain Bias
(VDD)
Seven Identical Stages
Aux. Drain
RF Output
RF Input
124
Second Gate
124
Bias (VG2)
Temp
Diode
Sense
Temp
Diode
Force
Single Stage Shown
Figure 1. HMMC-5021/22/26 Schematic.
First Gate
Bias (VG1)
6-30
Aux. Gate
Note:
FET gate periphery in microns.
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