HMMC-5022 Ver la hoja de datos (PDF) - HP => Agilent Technologies
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HMMC-5022 Datasheet PDF : 6 Pages
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HMMC-5021/22/26 DC Specifications/Physical Properties,[1] applies to all part numbers
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
IDSS
Saturated Drain Current
(VDD = 7.0 V, VG1 = 0 V, VG2 = open circuit)
Vp
First Gate Pinch-off Voltage
(VDD = 7.0 V, IDD = 16 mA, VG2 = open circuit)
mA
115
180
250
V
-3.5
-1.5
-0.5
VG2
Second Gate Self-Bias Voltage
(VDD = 7.0 V, VG1 = 0 V)
V
2.1
IDSOFF
(VG1)
First Gate Pinch-off Current
(VDD = 7.0 V, VG1 = -3.5 V, VG2 = open circuit)
mA
4
IDSOFF
(VG2)
Second Gate Pinch-Off Current
(VDD = 5.0 V, VG1 = 0 V, VG2 = -3.5 V)
mA
8
θch-bs
Thermal Resistance
(Tbackside = 25°C)
°C/W
36
Note:
1. Measured in wafer form with Tchuck = 25°C. (Except θch-bs.)
HMMC-5021/22/26 RF Specifications, VDD = 7.0 V, IDD(Q) = 150 mA, Zin = Zo = 50 Ω [1]
2.0–22.0 GHz
2.0–26.5 GHz
Symbol
Parameters/Conditions
Units HMMC-5021
HMMC-5022
HMMC-5026
Typ.
Min. Typ. Max. Min. Typ. Max.
BW
Guaranteed Bandwidth
GHz 2-22
2
22
2
26.5
S21
∆S21
RLin(min)
RLout(min)
Isolation
Small Signal Gain
Small Signal Gain Flatness
Minimum Input Return Loss
Minimum Output Return Loss
Minimum Reverse Isolation
dB
10
8.0
10
12 7.5 9.5
12
dB
± 0.5
± 0.5 ± 1.0
± 0.75 ± 1.0
dB
16
10
16
10
14
dB
13
10
13
10
13
dB
32
20
32
20
30
P-1dB Output Power at 1 dB Gain Comp. dBm
18
Psat
Saturated Output Power
dBm
20
Max. Second Harm. (2 <ƒo<20),
H2(max) [Po(ƒo) = 17 dBm or P-1dB,
dBc
-25
whichever is less.]
15
18
17
20
12
15
14
17
-25 -20
-25 -20
H3(max)
Max. Third Harm. (2 <ƒo< 20),
[Po(ƒo) = 17 dBm or P-1dB,
whichever is less.]
dBc
-34
-34 -20
-34 -20
NF
Noise Figure
dB
8
8
10
Notes:
1. Small-signal data measured in wafer form with Tchuck = 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package @ TA = 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB
corner frequency ≈ 29.5 GHz.
6-29
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