HMMC-5021RF Ver la hoja de datos (PDF) - HP => Agilent Technologies
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HMMC-5021RF Datasheet PDF : 6 Pages
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2– 26.5 GHz GaAs MMIC
Traveling Wave Amplifier
Technical Data
HMMC-5021 (2-22 GHz)
HMMC-5022 (2-22 GHZ)
HMMC-5026 (2-26.5 GHz)
Features
• Wide-Frequency Range:
2 - 26.5 GHz
• High Gain: 9.5 dB
• Gain Flatness: 0.75 dB
• Return Loss:
Input: -14 dB
Output: -13 dB
• Low-Frequency Operation
Capability: < 2 GHz
• Gain Control:
35 dB Dynamic Range
• Moderate Power:
20 GHz: P-1dB: 18 dBm
Psat: 20 dBm
26.5 GHz: P-1dB: 15 dBm
Psat: 17 dBm
Description
The HMMC-5021/22/26 is a
broadband GaAs MMIC Traveling
Wave Amplifier designed for high
gain and moderate output power
over the full 2 to 26.5 GHz fre-
quency range. Seven MESFET
cascode stages provide a flat gain
response, making the
HMMC-5021/22/26 an ideal
wideband gain block. Optical
lithography is used to produce
gate lengths of ≈ 0.4 µm. The
HMMC-5021/22/26 incorporates
advanced MBE technology,
Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 770 µm (117.3 x 30.3 mils)
± 10µm (± 0.4mils)
127 ± 15 µm (5.0 ± 0.6 mils)
75 x 75 µm (2.95 x 2.95 mils), or larger
Absolute Maximum Ratings
Symbol Parameters/Conditions
Units Min. Max.[1]
VDD
Positive Drain Voltage
V
8.0
IDD
Total Drain Current
mA
250
VG1
First Gate Voltage
V
-5
0
IG1
VG2[2]
First Gate Current
Second Gate Voltage
mA
-9
+5
V
-2.5 +3.5
IG2
Second Gate Current
mA
-7
PDC
DC Power Dissipation
watts
2.0
Pin
CW Input Power
dBm
23
Tch
Operating Channel Temp.
°C
+150
Tcase
TSTG
Operating Case Temp.
Storage Temperature
°C
-55
°C
-65 +165
Tmax
Maximum Assembly Temp.
(for 60 seconds maximum)
°C
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. TA = 25°C except for Tch, TSTG, and Tmax.
2. Minimum voltage on VG2 must not violate the following: VG2(min) > VDD - 9 volts.
5965-5449E
6-28
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