ATF-13736 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-13736 Datasheet PDF : 4 Pages
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ATF-13736 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+5
-4
-6
IDSS
225
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 400°C/W; TCH = 150°C
1␣ µm Spot Size[5]
Part Number Ordering Information
Part Number
Devices Per Reel
ATF-13736-TR1
1000
ATF-13736-STR
10
Reel Size
7"
strip
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.5 mW/°C for
TCASE > 85°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
4.0
1.1
.71
102
.10
6.0
1.3
.55
147
.07
8.0
1.5
.46
-144
.19
12.0
1.8
.50
-40
.88
14.0
2.1
.52
-2
1.17
ATF-13736 Typical Performance, TA = 25°C
16
25
14
20
12
GA
MSG
10
15
2.0
8
MAG
1.5
6
10
NFO
|S21|2
1.0
5
0.5
0
6.0
8.0
10.0 12.0 14.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
0
2.0
4.0 6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
25
20
MSG
15
MAG
MSG
10
|S21|2
5
0
2.0
4.0 6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
5-40
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