ATF-26884 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
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Fabricante
ATF-26884 Datasheet PDF : 4 Pages
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2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26884
Features
• High Output Power:
18.0␣ dBm Typical P 1dB at 12␣ GHz
• High Gain:
9.0 dB Typical GSS at 12␣ GHz
• Low Cost Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
Description
The ATF-26884 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
84 Plastic Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
GSS
NFO
GA
P1 dB
gm
IDSS
VP
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA
Gain @ NFO: VDS = 3 V, IDS = 10 mA
Power Output @ 1 dB Gain Compression:
VDS = 5 V, IDS = 30 mA
Transconductance: VDS = 3 V, VGS = 0 V
Saturated Drain Current: VDS = 3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
f = 12.0 GHz dB
f = 12.0 GHz dB
f = 12.0 GHz dB
f = 12.0 GHz dBm
mmho
mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Min.
7.0
15.0
15
30
-3.5
Typ.
9.0
2.2
6.0
18.0
35
50
-1.5
Max.
90
-0.5
5-71
5965-8703E
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