1N6096 Ver la hoja de datos (PDF) - Naina Semiconductor ltd.

Número de pieza

componentes Descripción

Fabricante

1N6096

Schottky Power Diode, 25A

Naina Semiconductor ltd. 

Naina Semiconductor Ltd.

Features

• Fast Switching

• Low forward voltage drop

• High surge capability

• High efficiency, low power loss

• Normal and Reverse polarity

Schottky Power Diode, 25A

1N6095 thru

1N6096R

DO-203AA (DO-4)

Maximum Ratings (TJ = 25oC, unless otherwise noted)

Parameter

Test Conditions

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Continuous forward current

Surge non-repetitive forward

current, half-sine wave

Forward voltage

Reverse current

TC ≤ 100oC

TC = 25oC

tp = 8.3 ms

IF = 25 A

TJ = 25oC

VR = 20V, TJ = 25oC

VR = 20V, TJ = 125oC

Symbol

VRRM

VRMS

VDC

IF

IFSM

VF

IR

1N6095(R)

30

21

30

25

400

0.58

2

250

1N6096(R)

40

28

40

25

400

0.58

2

250

Units

V

V

V

A

A

V

mA

Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)

Parameters

Symbol

Maximum thermal resistance, junction to case

Operating junction temperature range

Storage temperature

Rth(JC)

TJ

Tstg

Mounting torque (non-lubricated threads)

F

Approximate allowable weight

W

1N6095(R)

1N6096(R)

1.8

-55 to 150

-55 to 175

2.0

5.0

Units

oC/W

oC

oC

Nm

g

1

D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653

sales@nainasemi.com • www.nainasemi.com

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