1N60ZG-TN3-R Ver la hoja de datos (PDF) - Unisonic Technologies

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Fabricante

1N60ZG-TN3-R

1.2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N60Z

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS =1.2A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

trr

VGS=0V, IS=1.2A

QRR

dIF/dt=100A/μs (Note 1)

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

3. Essentially Independent of Operating Temperature

MIN TYP MAX UNIT

1.4 V

1.2 A

4.8 A

160

ns

0.3

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-724.C

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