1N60ZG-TN3-R Ver la hoja de datos (PDF) - Unisonic Technologies
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1N60ZG-TN3-R Datasheet PDF : 6 Pages
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1N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
600
V
±20
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
Power Dissipation (TA=25℃)
TO-92
TO-252
PD
1
W
1.5
Junction Temperature
Operating Temperature
TJ
TOPR
+150
℃
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-92
TO-252
SYMBOL
θJA
RATINGS
140
100
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
UNIT
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
600
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
10 μA
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
+5 μA
-5 μA
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=0.6A
9.3 11.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
120 150 pF
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1MHz
20 25 pF
Reverse Transfer Capacitance
CRSS
3.0 4.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
5 20 ns
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=300V, ID=1.2A, RG=50Ω
(Note 2,3)
25 60 ns
7 25 ns
Turn-Off Fall Time
tF
25 60 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=480V, VGS=10V,
ID=1.2A (Note 2,3)
5.0 6.0 nC
1.0
nC
2.6
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-724.C
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