1MBI200U4H-120L-50 Ver la hoja de datos (PDF) - Fuji Electric
Número de pieza
componentes Descripción
Fabricante
1MBI200U4H-120L-50 Datasheet PDF : 7 Pages
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1MBI200U4H-120L-50
FWD
Forward current vs. Forward on voltage (typ.)
chip
700
600
Tj=25oC Tj=125oC
500
400
300
200
100
0
0
1
2
3
4
Forward on voltage : VF [ V ]
Inverse Diode
Forward current vs. Forward on voltage (typ.)
chip
250
200
Tj=25oC Tj=125oC
150
100
50
0
0
1
2
3
4
Forward on voltage : VF [ V ]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
FWD
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, RG=3Ω
Irr(125oC)
Irr(25oC)
trr(125oC)
100
trr(25oC)
10
0
100
200
300
400
Forward current : IF [ A ]
1.000
0.100
Transient thermal resistance (max.)
Inberse Diode
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
5
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