18N60L-T47-T(2008) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

18N60L-T47-T
(Rev.:2008)

POLARHV HIPERFET POWER MOSFET

Unisonic Technologies 

18N60

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

ID

18

A

Pulsed Drain Current

IDM

45

A

Avalanche Current

IAR

18

A

Avalanche Energy

Single Pulsed

EAS

Repetitive

EAR

1000

mJ

30

Peak Diode Recovery dv/dt

dv/dt

10

V/ns

Power Dissipation

PD

360

W

Junction Temperature

TJ

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

Junction-to-Case

PARAMETER

SYMBOL

MIN

TYP

θJC

„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

MAX

0.35

UNIT

℃/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=250µA

Zero Gate Voltage Drain Current

IDSS

VDS=VDSS, VGS=0V

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±30V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

RDS(ON) VGS=10V, ID=0.5ID25 (Note 1)

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

COSS

VDS=25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VGS=10V, VDS=0.5VDSS,

ID=ID25, RG=5Ω (External)

Turn-OFF Fall-Time

tF

Total Gate Charge

Gate Source Charge

Gate Drain Charge

QG

QGS

QGD

VGS=10V, VDS=0.5VDSS,

ID=0.5ID25

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IF=IS ,VGS=0V (Note 1)

Maximum Continuous Drain-Source

Diode Forward Current

IS

VGS=0V

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Repetitive

Reverse Recovery Time

Reverse Recovery Charge

tRR

VGS=0V, di/dt=100A/s,

QRR

IS=18A, VR=100V

Note 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.

MIN TYP MAX UNIT

600

V

25 µA

±100 nA

2.0

4.0 V

400 mΩ

2500

pF

280

pF

23

pF

21

ns

22

ns

62

ns

22

ns

50

nC

15

nC

18

nC

1.5 V

18 A

54 A

200 ns

0.8

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-221.Aa

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