12N80(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

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Fabricante

12N80
(Rev.:2011)

12A, 800V N-CHANNEL POWER MOSFET

Unisonic Technologies 

12N80

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous (TC=25°C)

ID

Pulsed (Note 2)

IDM

12

A

48

A

Avalanche Current (Note 2)

IAR

12

A

Power Dissipation

TO-220

TO-220F1

PD

225

W

51

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-220F1

SYMBOL

θJA

θJC

RATINGS

62.5

0.56

2.43

UNIT

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-594.b

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