12N80(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

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componentes Descripción

Fabricante

12N80
(Rev.:2011)

12A, 800V N-CHANNEL POWER MOSFET

Unisonic Technologies 

12N80

Preliminary

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C

Drain-Source Leakage Current

IDSS

VDS=800V, VGS=0V

VDS=640V, TC=125°C

Gate- Source Leakage Current Forward

Reverse

ON CHARACTERISTICS

IGSS

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=6A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=640V, ID=12A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=400V, ID=12A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=12A, VGS=0V

Body Diode Reverse Recovery Time

trr

VGS=0V, IS=12A, dIF/dt=100A/µs

Body Diode Reverse Recovery Charge

QRR

(Note 1)

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

MIN TYP MAX UNIT

800

V

1.0

V/°C

10 µA

100

100 nA

-100 nA

3.0

5.0 V

0.75 0.9 Ω

4200

pF

315

pF

90

pF

123 155 nC

27 45 nC

49 80 nC

18 50 ns

12 50 ns

51 100 ns

18 50 ns

12 A

48 A

1.4 V

1000

ns

17.0

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-594.b

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