10RIA60S90 Ver la hoja de datos (PDF) - Vishay Semiconductors
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10RIA60S90 Datasheet PDF : 8 Pages
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10RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 10 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE (1)
V
10
100
20
200
40
400
10RIA
60
600
80
800
100
1000
120
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE (2)
V
150
300
500
700
900
1100
1300
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
20
10
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2) For voltage pulses with tp ≤ 5 ms
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)),
TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
VALUES
10
85
25
225
240
190
200
255
233
180
165
2550
1.10
1.39
24.3
16.7
1.75
130
200
UNITS
A
°C
A
A
A2s
A2√s
V
mΩ
V
mA
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Document Number: 93689
Revision: 06-Jun-08
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